Lọdun 2015 ni wọn yọ Hulk Hogan kuro ninu ẹgbẹ ogbontarigi WWE Hall of Fame lori ẹsun pe o sọrọ kan to ni i ṣe pẹlu idẹyẹsi ...

This paper offers an in-depth analysis of selfheating modeling in $1-\\mathrm{mm}$ GaN-on-SiC high electron mobility transistors (HEMTs). Direct (DC) current-voltage (I-V) and short pulse I-V ...

Despite the festival’s light-hearted atmosphere and its scenes of camaraderie and celebration, a shared sense of crisis reverberated across both the international and regional film selections. War, ...

Continued innovation is helping to drive the development and growing adoption of wide bandgap materials, such as GaN.