Abstract: We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics.
Abstract: By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with enhanced gate ...
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