The LM5113 is a half-bridge gate driver designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The ...
The MSK 4900 is a 600 V isolated half bridge gate driver that works in 8 amps peak turn-on and turn-off current. This device houses the entire isolated DC-DC converter circuitry and opto-isolators for ...
Microchip is introducing its 600V Gate Driver portfolio, featuring 12 devices for the protection of discrete MOSFETs and IGBTs. They are available in half-bridge, high-side/low-side and 3-phase driver ...
GENEVA, SWITZERLAND, October 9, 2025 /EINPresswire.com/ -- STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride (GaN) gate drivers are ...
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started providing engineering samples of " TB9104FTG ," a ...
The integrated GaN half-bridge gate drivers bring flexibility and smart protection to a wide range of applications running on industrial or telecom bus voltages up to 220 V. The STDRIVEG210 excels in ...
Members can download this article in PDF format. High efficiency and high power density are critical characteristics when designing power supplies for today’s products. To achieve these goals, ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results